document number: 93548 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 1 standard recovery diodes (stud version), 400 a sd400n/r series vishay high power products features ? wide current range ? high voltage ratings up to 2400 v ? high surge current capabilities ? stud cathode and stud anode version ? standard jedec types ? compression bonded encapsulations ? lead (pb)-free ? designed and qualified for industrial level typical applications ? converters ? power supplies ? machine tool controls ? high power drives ? medium traction applications electrical specifications product summary i f(av) 400 a do-205ab (do-9) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 480 a t c 120 c i f(rms) 630 a i fsm 50 hz 8250 60 hz 8640 i 2 t 50 hz 340 ka 2 s 60 hz 311 v rrm range 1600 to 2400 v t j - 40 to 190 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = t j maximum ma sd400n/r 16 1600 1700 15 20 2000 2100 24 2400 2500
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93548 2 revision: 17-apr-08 sd400n/r series vishay high power products standard recovery diodes (stud version), 400 a forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 400 a 120 c 480 a 100 c maximum rms forward current i f(rms) dc at 110 c case temperature 630 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 8250 t = 8.3 ms 8640 t = 10 ms 100 % v rrm reapplied 6940 t = 8.3 ms 7270 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 340 ka 2 s t = 8.3 ms 311 t = 10 ms 100 % v rrm reapplied 241 t = 8.3 ms 220 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 3400 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.80 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 0.85 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.55 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.51 maximum forward voltage drop v fm i pk = 1500 a, t j = t j maximum, t p = 10 ms sinusoidal wave 1.62 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 190 c maximum storage temperature range t stg - 55 to 200 maximum thermal resistance, junction to case r thjc dc operation 0.11 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.04 maximum allowed mounting torque 10 % not-lubricated threads 27 nm approximate weight 250 g case style see dimensions (link at the end of datasheet) do-205ab (do-9)
document number: 93548 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 3 sd400n/r series standard recovery diodes (stud version), 400 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.020 0.013 t j = t j maximum k/w 120 0.023 0.023 90 0.029 0.031 60 0.042 0.044 30 0.073 0.074 110 120 130 140 150 160 170 180 190 0 50 100 150 200 250 300 350 400 450 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) sd 4 0 0 n / r se r i e s r (dc) = 0.11 k/ w thjc 100 110 120 130 140 150 160 170 180 190 0 100 200 300 400 500 600 700 dc 30 60 90 120 180 conduction period maximum allowable case temperature (c) average forward current (a) sd 4 0 0 n / r se r i e s r (dc) = 0.11 k/ w thjc 10 30 50 70 90 110 130 150 170 190 maximum allowable ambient temperature (c) 0 . 2k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 k / w r = 0 . 0 4 k / w - d e l t a r t h s a 0 . 1 k / w 1 . 8 k / w 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 350 400 180 120 90 60 30 rm s li m i t conduction angle maximum average forward power loss (w) average forward current (a) sd 4 0 0 n / r se r i e s t = 1 9 0 c j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93548 4 revision: 17-apr-08 sd400n/r series vishay high power products standard recovery diodes (stud version), 400 a fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fi g. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics 10 30 50 70 90 110 130 150 170 190 maximum allowable ambient temperature (c) 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 k / w r = 0 . 0 4 k / w - d e l t a r t h s a 0 . 1 k / w 1 . 8 k / w 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 dc 180 120 90 60 30 rm s li m i t conduction period maximum average forward power loss (w) average forward current (a) sd 4 0 0 n / r se r i e s t = 190c j 2000 3000 4000 5000 6000 7000 8000 110100 numb e r of eq ua l amp litud e ha lf cyc le current pulses (n) peak half sine wave forward current (a) sd 4 0 0 n / r se r i e s initia l t = 190c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 pu lse tra in du ra t io n ( s) peak half sine wave forward current (a) versus pulse train duration. maximum non repetitive surge current in it ia l t = 190c no volt a g e rea p p lie d rated v reapplied rrm j sd 4 0 0 n / r se r i e s 100 1000 10000 0.5 1 1.5 2 2.5 t = 2 5 c j in st a n t a n e o u s fo r w a r d v o lt a g e ( v ) instantaneous forward current (a) sd 4 0 0 n / r se r i e s t = 1 9 0 c j
document number: 93548 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 17-apr-08 5 sd400n/r series standard recovery diodes (stud version), 400 a vishay high power products fig. 8 - thermal impedance z thjc characteristic ordering information table 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) thjc transient thermal impedance z (k/ w) sd 4 0 0 n / r se r i e s st e a d y st a t e v a l u e : r = 0.11 k/ w (dc operation) thjc device code 5 13 24 67 sd 40 0 n 24 p c 1 - diode 2 - essential part number 3 - 0 = standard recovery 4 - n = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base do-205ab (do-9) 3/4" 16unf-2a 7 - c = ceramic housing for metric device m16 x 1.5 contact factory links to related documents dimensions http://www.vishay.com/doc?95301
document number: 95301 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 09-apr-08 1 do-205ab (do-9) outline dimensions vishay semiconductors dimensions in millimeters (inches) ceramic housing 19 (0.75) max. 4 (0.16) max. dia. 8.5 (0.33) nom. dia. 27.5 (1.08) max. 16 (0.63) max. sw 32 *for metric device: m16 x 1.5 contact factory c.s. 35 mm 2 (0.054 s.i.) 210 (8.27) 10 (0.39) 82 (3.23) min. 21 (0.82) max. 3/4"-16unf-2a* 9.5 (0.37) min. 39 (1.53) max.
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